BIOGRAPHY

Ultra-Short Channel 1D-2D Compound Semiconductor on Insulator (XOI) FETs [BPN469]
Recently, compound semiconductor on insulator(XOI)has risen as a promising platform for next
generation high performance electronics, as it inherits advantages from both SOI and high mobility
III-V materials. In order to test the performance limit of this platform, we plan on fabricating
ultra-short channel XOI FETs. This project will involve various controlled experiments to better
understand the underlying physics of XOI FETs, thus allowing us to progress towards the ultimate XOI
FET.