Hui received his BS from Tsinghua University (Beijing) in 2009 and his MS from the University of California, Berkeley in 2011. He is now pursuing his PhD at Berkeley working with Professor Ali Javey.
His research interests include exploring novel monolayer semiconductors and device architectures for high performance/low power consumption electronics and nanoscale doping of semiconductors. Hui enjoys unraveling new materials science mysteries and engineering out optimal devices.
Compound Semiconductor on Insulator (XOI) FETs [BPN567]
Due to their high mobility, the integration of compound semiconductors on Si has been
actively studied over the past several years. This integration,
however, presents significant challenges. The conventional method of addressing this problem
consists of growth of multiple epilayers of materials to address the
lattice mismatch between Si and the desired semiconductor, leading to highly complex fabrication
techniques. Here we demonstrate high performance compound
semiconductor on insulator (XOI) field effect transistors (FET) consisting of ultra-thin InAs
nanoribbons (NR) on insulator that exhibit performance on par with the
state of the art quantum well FETs. We have performed a detailed study on the transport properties
of these InAs ribbons,
showing that quantum confinement plays a significant role in the electron transport properties. In
detail, the contact
resistance and mobility are heavily affected by the number of sub-bands populated.