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Chuan Wang, PostDoc 2013

Electrical and Computer Engineering
Advisor: Prof. Javey
(517) 432-4309

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Research Interests: Flexible electronics, RF electroncis, Printed Electronics, Carbon Nanotubes, 2D semiconductor nanomembranes.
Job Interests: Academic

BIOGRAPHY
Dr. Chuan Wang is a postdoctoral scholar in Prof. Ali Javey's research group at University of California, Berkeley. After receiving his B.S. degree in Microelectronics from Peking University in 2005, he joined University of Southern California in 2007 working as a research assistant in Prof. Chongwu Zhouí»s research group and received his Ph.D. in Electrical Engineering in 2011. Chuan's Ph.D. research focuses on the application of carbon nanotubes for scalable, practical, and high performance nanoelectronics and macroelectronics. He has pioneered in the field of using purified semiconducting carbon nanotubes or CVD-grown horizontally aligned carbon nanotubes for high-performance thin-film transistors, integrated circuits, display electronics, and RF electronics. Chuan's current research interests include flexible electronics, stretchable electronics, roll-to-roll printed electronics, and RF electronics using various types of nanomaterials including carbon nanotubes, graphene, and 2D III-V nanomembranes.

High Performance Flexible Integrated Circuits Using Carbon Nanotube Networks [BPN659]
In this Project, we report the use of high-purity semiconducting carbon nanotube networks
and 2-dimensional III-V nanomembranes for high-performance integrated circuits on mechanically
flexible substrates for digital, analog, and radio-frequency applications. We have demonstrated
high-performance carbon nanotube thin-film transistors (TFTs) with on-current, transconductance, and
field-effect mobility up to 15 uA/um, 4 uS/um, and 50 cm2/Vs. Using such devices, digital logic
gates with superior bending stability have been demonstrated. We have also employed a self-aligned
device architecture to fabricate RF transistors with channel lengths down to 75 nm using InAs
nanomembranes on flexible substrates. Measurements reveal that such devices provide an impressive
cutoff frequency of 105 GHz, representing the best performance achieved for transistors fabricated
directly on mechanically flexible substrates. The results demonstrate that our platform can serve as
a foundation for scalable, low-cost, high-performance flexible electronics, enabling multiple types
of nanomaterials to be heterogeneously integrated on flexible substrates for advanced system-level
integrated circuits.


 

     Last Updated: Fri 2013-Aug-16 13:53:38

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