Rehan received his B.S. degree in electrical engineering from the University of Texas, Austin in 2008. After receiving his degree, he started at UC Berkeley and joined the Javey Research Group. He is currently exploring the potential of compound semiconductor-on-insulator (XOI) devices based on InAs as the active channel material through device fabrication, characterization and modeling.
Compound Semiconductor on Insulator (XOI) FETs [BPN567]
Due to their high mobility, the integration of compound semiconductors on Si has been
actively studied over the past several years. This integration,
however, presents significant challenges. The conventional method of addressing this problem
consists of growth of multiple epilayers of materials to address the
lattice mismatch between Si and the desired semiconductor, leading to highly complex fabrication
techniques. Here we demonstrate high performance compound
semiconductor on insulator (XOI) field effect transistors (FET) consisting of ultra-thin InAs
nanoribbons (NR) on insulator that exhibit performance on par with the
state of the art quantum well FETs. We have performed a detailed study on the transport properties
of these InAs ribbons,
showing that quantum confinement plays a significant role in the electron transport properties. In
detail, the contact
resistance and mobility are heavily affected by the number of sub-bands populated.