HEaTS: SiC Diodes and Rectifiers for Harsh Environment Sensing Applications [BPN663]
The goal of this project is to develop harsh environment rectification and sensing circuits.
The devices and circuits are designed in silicon carbide (SiC) wafer due to its extraordinary
performance in harsh environment such as high temperature, corrosive chemical. SiC diodes and
rectifier bridges will be designed, fabricated and tested in my research project to develop harsh
environment sensing system.