Research Interests: Device-driven materials development for energy harvesting/storage and steep-slope electronic applications; fundamental interaction between electronic, optical and vibrational degrees of freedom; band gap, band offset, interface and contact engineering; nanomaterials; nanofabricationJob Interests: Research management position in industry, academia, national lab or privately held research institution
Corsin BATTAGLIA obtained his PhD in physics from the University of Neuch‚tel, Switzerland in 2008 for his work on the structural and electronic properties of self-assembled atomic chains on silicon surfaces. He also worked at Hitachi, Japan and at the Paul Scherrer Institute, Switzerland. In 2009, he joined EPFLís PV-Lab, Switzerland as a postdoc and project leader where he worked on advanced light management concepts for thin-film silicon solar cells ranging from the development of new substrates and electrode materials to the fabrication and characterization of state-of-the-art cells. Since 2012 he is at UC Berkeley, USA. His current research focuses on novel concepts for thin-film III-V solar cells on non-epitaxial substrates and the development of carrier selective contacts for silicon and III-V solar cells.
Carrier-Selective Oxide Contacts for Silicon Electronics [BPN755]
Efficient carrier selective contacts are key to electronic devices based on silicon including sensors, microelectromechanical systems, field effect transistors and photovoltaics. We explore substoichiometric molybdenum trioxide (MoOx, x<3) as a dopant-free, hole-selective contact for silicon. As a proof of principle, we demonstrate a silicon solar cell with a MoOx hole contact delivering a high open-circuit voltage of 711 mV and a power conversion efficiency of 18.8%. Due to the wide band gap of MoOx, we observe a substantial gain in photocurrent of 1.9 mA/cm2 in the ultraviolet and visible part of the solar spectrum, when compared to a p-type hydrogenated amorphous silicon emitter of a traditional silicon heterojunction cell. With a high workfunction exceeding those of elemental metals, MoOx presents an important opportunity to contact holes in inorganic semiconductor materials beyond silicon including III-V semiconductors, carbon-based nanomaterials and layered transition metal dichalcogenide semiconductors.