Fall 2010 IAB
September 15 to 17
Heterogeneous Integration of Microdisk Lasers Photonic Circuits using Optoelectronic Tweezers
Semiconductor lasers on a silicon platform have attracted much attention due to the potential of integration with CMOS integrated circuits. Silicon Raman lasers have been demonstrated, however, they still require external optical pumps. Heteroepitaxy can grow compound semiconductor lasers directly on Si, but the growth temperature (> 400oC) is usually too high for post CMOS processing. To circumvent this issue, electrically-pumped compound-silicon hybrid lasers have been integrated on Si wafers utilizing oxygen plasma-assisted wafer bonding or DVS-BCB-assisted bonding techniques. The low bonding temperature (<300ºC) enables post-CMOS integration, however, the silicon layer to which the laser wafer bonds is buried under a thick stack of interconnect layers. We achieve low-cost optical/microelectronic integrated circuits based on existing CMOS processes using a low temperature post-CMOS assembly technique.