Fall 2010 IAB
September 15 to 17
Silicide-Induced Air Gaps for MEMS Structures
A new method for releasing microstructures with large lateral dimension-to-vertical gap spacing has been demonstrated that utilizes silicidation to form gaps between movable microstructures and their substrates in substantially faster times than conventional sacrificial layer-based release methods and with much less concern for attack of unintended layers. The key enabling element is the use of a self-sufficient chemical reaction (such as silicidation) to provide shrinkage in volume that then induces a gap between surfaces involved in the reaction. This silicidation-based approach to releasing microstructures increases the achievable lateral dimensions of etch hole-free suspended microstructures with shorter time and lower cost.