Fall 2010 IAB
September 15 to 17
XOI - Materials and Devices for Green Electronics
Compound semiconductor materials, due to their high mobilities, present an opportunity for future high performance and low power electronics. However, conventional fabrication methods have limited application due to the complex growth process and resulting device architectures. Here we present a generic compound semiconductor on insulator (XOI) platform that enables the fabrication of high performance field-effect-transistors (FET), both MOSFETs and tunnel FETs. Utilizing the InAs material system, we demonstrate the quantum confinement effects on carrier scattering in XOI FETs. In addition, we illustrate a method of controlling the strain in the XOI platform, giving us an additional method to control the electronic properties of XOI FETs.