Fall 2010 IAB
September 15 to 17
Piezoelectric Micromachined Ultrasound Transducer Arrays
Aluminum Nitride (AlN) is a very promising piezoelectric material for integrated CMOS/MEMS devices because of its low temperature sputtering process. AlN has high thermal conductivity, low leakage, low relative dielectric coefficient (allowing high strain-to-voltage output and low parasitic capacitance), and low material loss. Because of these characteristics, a MEMS AlN piezoelectric micromachined ultrasound transducer is proposed. Our pMUTs utilize a thin piezoelectric membrane structure that is commonly used as the actuating, sensing, or sound generation components in MEMS because of its geometrical flexibility and easy integration to various MEMS devices. In this talk we will be discussing our current progress in fabricating and characterizing matched arrays of AlN pMUTs.