Fall 2010 IAB
September 15 to 17
Silicon Carbide Semiconductor Devices and ICs for Harsh Environment Sensing
The main objective of this research is to design and develop low power Silicon Carbide (SiC) based transistors and Integrated Circuits (ICs) that can withstand the elevated temperature, up to 600 degrees Celsius. The fabricated ICs will be utilized as analog signal conditioning unit, power management unit, and wireless transmission unit to be integrated with the SiC-based sensors. Hence, high temperature self-powered sensing system with wireless telemetry capability for various harsh environment applications can be developed.