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BPN306: SiC TAPS: Ion Beam Assisted Deposition (IBAD) Encapsulation

Project ID BPN306
Website
Start Date Fri 2005-Aug-26 17:18:33
Last Updated Sun 2007-Feb-04 12:44:54
Abstract The goal of this project is to develop a low temperature, wafer-level vacuum encapsulation technique for harsh environment, silicon carbide (SiC) sensors.
Status Continuing
Funding Source Federal
IAB Research Area Package, Process & Microassembly
Researcher(s) Debbie G. Jones
Advisor(s) Albert P. Pisano
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Summary Slide PDF | VIDEO
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