BPN306: SiC TAPS: Ion Beam Assisted Deposition (IBAD) Encapsulation

Project ID BPN306 Website Start Date Fri 2005-Aug-26 17:18:33 Last Updated Sun 2007-Feb-04 12:44:54 Abstract The goal of this project is to develop a low temperature, wafer-level vacuum encapsulation technique for harsh environment, silicon carbide (SiC) sensors. Status Continuing Funding Source Federal IAB Research Area Package, Process & Microassembly Researcher(s) Debbie G. Jones Advisor(s) Albert P. Pisano

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