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BPN389: SiC TAPS: Characterization of Silicon Carbide Ion Beam Assisted Deposition (IBAD) Films

Project ID BPN389
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Start Date Thu 2007-Feb-01 17:35:25
Last Updated Sun 2007-Jul-29 12:21:48
Abstract Silicon Carbide (SiC) is an appealing material for harsh environment MEMS applications. It can be sputtered at low temperatures by an Ion-Beam Assisted Deposition (IBAD) system to produce amorphous thin-films and vacuum encapsulations. The goal of this project is to investigate the stress-temperature relation of these amorphous SiC films in order to calculate their biaxial moduli and coefficients of thermal expansion. The “double-substrate technique” is employed to compare the differences in these properties for films that are sputtered both with and without ion-beam assistance on quartz and silicon substrates. Characterizing these films will determine if certain issues, such as thermal and stress mismatches, will pose a problem in certain applications.
Status Continuing
Funding Source Federal
IAB Research Area Package, Process & Microassembly
Researcher(s) Matt Chan
Advisor(s) Albert P. Pisano
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