| Project ID |
BPN424 |
| Website |
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| Start Date |
Tue 2008-Jan-22 19:08:18 |
| Last Updated |
Tue 2009-Aug-11 18:26:57 |
| Abstract |
Silicon Carbide (SiC) is an appealing material for harsh environment MEMS and electronics applications. The goal of this project is to develop, optimize and scale-up polycrystalline and epitaxial SiC thin films for harsh environment TAPS (Temperature, Acceleration, Pressure and Strain) sensors and electronics. We are pursuing two new precursors, namely methylsilane and methyltrichlorosilane for chemical vapor deposition of SiC.
The research aims to develop the process parameters to obtain high quality polycrystalline SiC films with good growth rates, high uniformity, controlled residual stress, controlled strain gradient, and controlled resistivity.
Furthermore, the development of high quality epitaxial SiC with controllable structural and electronic properties are being investigated. |
| Status |
Continuing |
| Funding Source |
DARPA |
| IAB Research Area |
Physical Sensors & Devices |
| Researcher(s) |
Fang Liu |
| Advisor(s) |
Roya Maboudian, Carlo Carraro |
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