| Project ID |
BPN461 |
| Website |
|
| Start Date |
Tue 2008-Jul-22 17:40:20 |
| Last Updated |
Thu 2011-Aug-18 13:38:33 |
| Abstract |
We introduce a novel transistor based on the inter-band tunneling by III-V materials. The
type II staggered heterojunction between two compound semiconductors can provide an electron tunneling
by quantum mechanical effect from the valence band to the conduction band of semiconductors, and
result in reduced sub-threshold swing compared to diffusion in MOSFETs. This allows for these devices
to be operated at lower voltages, and thus function with less power consumption. |
| Status |
Continuing |
| Funding Source |
Other |
| IAB Research Area |
NanoTechnology: Materials, Processes & Devices |
| Researcher(s) |
Ha sul Kim |
| Advisor(s) |
Ali Javey |
|
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