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BPN461: Low Energy Electronics

Project ID BPN461
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Start Date Tue 2008-Jul-22 17:40:20
Last Updated Thu 2011-Aug-18 13:38:33
Abstract We introduce a novel transistor based on the inter-band tunneling by III-V materials. The type II staggered heterojunction between two compound semiconductors can provide an electron tunneling by quantum mechanical effect from the valence band to the conduction band of semiconductors, and result in reduced sub-threshold swing compared to diffusion in MOSFETs. This allows for these devices to be operated at lower voltages, and thus function with less power consumption.
Status Continuing
Funding Source
IAB Research Area NanoTechnology: Materials, Processes & Devices
Researcher(s) Ha sul Kim
Advisor(s) Ali Javey
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