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BPN468: NANOELECTRONICS

Project ID BPN468
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Start Date Mon 2008-Aug-04 08:50:26
Last Updated Mon 2008-Aug-11 08:39:48
Abstract The ability to control the size, structure, composition and morphology of semiconductor nanowires (NWs) makes them ideal one-dimensional building blocks for potential applications in high performance nanoelectronics and large-area, flexible electronics. Uniquely, nanowires can be readily assembled on various substrates using low temperature processing conditions, therefore, making them compatible with CMOS processing while avoiding the lattice mismatch and single-crystalline growth challenges often encountered for epitaxial, planar thin films. As a result, the goal of present project for nanoelectronics are committed on (1) fabrication and characterization of novel one-dimensional nanomaterials, (2) figuring out the fundamental physical properties of the nanomaterials, and (3) designing the functional nano-devices (electronics and optoelectronics) via combing “bottom-up” nanomaterials and “top-down” CMOS. Following are the two main goals for this project: (1)InAs Nanowire and low power device design and fabrication: In all one-dimensional nanomaterials, InAs nanowires have been actively explored as the channel material for high performance transistors owing to their high electron mobility and ease of ohmic metal contact formation. The nanowires show superb electrical properties with field-effect electron mobility over 2,700 cm2/Vs and ION/IOFF >103. The uniformity and purity of the grown InAs nanowires are further demonstrated by large-scale assembly of parallel arrays of nanowires on substrates via the contact printing process that enables high performance, “printable” transistors, capable of delivering 5-10 mA ON currents (~400 nanowires). (2)Phase change material: Phase change material means that the different crystalline phenomenons, namely amorphous and crystalline statuses, can be reversible by annealing or directly applying bias on the device. The idea of operating the phase change memory device is based on the different resistivity owing to different transformation between amorphous and crystalline status. However, all the phase change materials, such as, GeTe, Ge2Sb2Te5 are not the Si/Ge based materials, which are not easily compatible with modern Si integration technology. Therefore, the main goal in this project is committed on finding materials system based on the Si/Ge materials and explore the novel concept which can be different from the “normal” phase change memory.
Status New
Funding Source Federal
IAB Research Area NanoTechnology: Materials, Processes & Devices
Researcher(s) Yu-Yun Chueh, Alexandra L. Ford, Johnny C. Ho, Zachery A. Jacobson,Zhiyong Fan
Advisor(s) Ali Javey
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