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NanoTechnology: Materials, Processes & Devices
     
 

BPN469: Ultra-Short Channel 1D-2D Compound Semiconductor on Insulator (XOI) FETs

Project ID BPN469
Website
Start Date Mon 2008-Aug-04 08:56:39
Last Updated Tue 2013-Jan-29 13:25:17
Abstract Recently, compound semiconductor on insulator(XOI)has risen as a promising platform for next generation high performance electronics, as it inherits advantages from both SOI and high mobility III-V materials. In order to test the performance limit of this platform, we plan on fabricating ultra-short channel XOI FETs. This project will involve various controlled experiments to better understand the underlying physics of XOI FETs, thus allowing us to progress towards the ultimate XOI FET.
Status Continuing
Funding Source Industry
IAB Research Area NanoTechnology: Materials, Processes & Devices
Researcher(s) Steven Chuang, Kuniharu Takei
Advisor(s) Ali Javey
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