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BPN469: Ultra-Short Channel 1D-2D Compound Semiconductor on Insulator (XOI) FETs
| Project ID |
BPN469 |
| Website |
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| Start Date |
Mon 2008-Aug-04 08:56:39 |
| Last Updated |
Tue 2013-Jan-29 13:25:17 |
| Abstract |
Recently, compound semiconductor on insulator(XOI)has risen as a promising platform for next
generation high performance electronics, as it inherits advantages from both SOI and high mobility
III-V materials. In order to test the performance limit of this platform, we plan on fabricating
ultra-short channel XOI FETs. This project will involve various controlled experiments to better
understand the underlying physics of XOI FETs, thus allowing us to progress towards the ultimate XOI
FET. |
| Status |
Continuing |
| Funding Source |
Industry |
| IAB Research Area |
NanoTechnology: Materials, Processes & Devices |
| Researcher(s) |
Steven Chuang, Kuniharu Takei |
| Advisor(s) |
Ali Javey |
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