| Project ID |
BPN530 |
| Website |
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| Start Date |
Sat 2010-Jan-23 14:11:39 |
| Last Updated |
Mon 2010-Jan-25 10:19:16 |
| Abstract |
We have previously created a new doping method of semiconductor--monolayer doping (MLD). This novel doping method can fulfill the need of the shrinking size of devices, and more important, it has much less damage than conventional ion-implantation and annealing. As the size of the devices is coming down, the issue of increasing resistance of the dopant region becomes severe. In this project, we seek to utilize the MLD technique and laser annealing to get beyond solid solubility limit doping and hence decrease the resistance of the doping region. |
| Status |
New |
| Funding Source |
Federal |
| IAB Research Area |
NanoTechnology: Materials, Processes & Devices |
| Researcher(s) |
Hui Fang, Kuniharu Takei, Johnny Ho |
| Advisor(s) |
Ali Javey |
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