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BPN530: Beyond Solubility Limit Monolayer Doping in InAs via Laser Annealing

Project ID BPN530
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Start Date Sat 2010-Jan-23 14:11:39
Last Updated Mon 2010-Jan-25 10:19:16
Abstract We have previously created a new doping method of semiconductor--monolayer doping (MLD). This novel doping method can fulfill the need of the shrinking size of devices, and more important, it has much less damage than conventional ion-implantation and annealing. As the size of the devices is coming down, the issue of increasing resistance of the dopant region becomes severe. In this project, we seek to utilize the MLD technique and laser annealing to get beyond solid solubility limit doping and hence decrease the resistance of the doping region.
Status New
Funding Source Federal
IAB Research Area NanoTechnology: Materials, Processes & Devices
Researcher(s) Hui Fang, Kuniharu Takei, Johnny Ho
Advisor(s) Ali Javey
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