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BPN531: Gigahertz Operation of Flexible Transistors Using InAs Nanomaterial Arrays

Project ID BPN531
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Start Date Sat 2010-Jan-23 15:08:18
Last Updated Wed 2011-Feb-02 11:28:24
Abstract In this project, we present NW-based high frequency flexible transistors operating in gigahertz regime. InAs NWs are printed on polyimide (PI) substrate with contact printing method, in which semiconducting NWs on the growth chip can be directly transferred to and aligned on the receiver substrate. Thus fabricated NW-based devices have ft = 1.04 GHz (unit transit frequency of the current gain) and fmax = 1.8 GHz (maximum frequency of oscillation). These results promise the potential of NW-based flexible TFT for future microwave applications.
Status Continuing
Funding Source
IAB Research Area NanoTechnology: Materials, Processes & Devices
Researcher(s) Toshitake Takahashi, Kuniharu Takei
Advisor(s) Ali Javey
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