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BPN542: New Materials for MEMS Resonators

Project ID BPN542
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Start Date Thu 2010-Jan-28 23:18:40
Last Updated Fri 2012-Feb-24 09:57:06
Abstract New resonator structural materials will be explored to achieve GHz-frequency MEMS resonators having ultra-high quality factors (Q's) and antenna-amenable motional impedances. Materials having acoustic velocities greater than that of polysilicon, such as diamond and silicon carbide (SiC), will be used to fabricate devices having higher resonance frequencies and higher Q's than their polysilicon counterparts. Low-loss metals, including metal alloys, will be investigated to achieve low deposition temperatures and high electrical conductivities while nonetheless maintaining high Q's. Post-processing techniques such as localized annealing will be investigated to improve Q's.
Status Continuing
Funding Source DARPA
IAB Research Area Wireless, RF & Smart Dust
Researcher(s) Robert Schneider
Advisor(s) Clark T.-C. Nguyen
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