| Project ID |
BPN556 |
| Website |
|
| Start Date |
Tue 2010-Feb-02 13:34:48 |
| Last Updated |
Mon 2010-Feb-08 11:36:47 |
| Abstract |
NiO is a p-type semiconductor material with band gap about 3.7 eV. It has been fabricated in
the form of film by several methods, including electrodeposition[1], pulse laser deposition[2], and
ion beam assisted e-beam evaporation[3]. Its applications have been limited to Nickel-ion battery,
catalysts and rechargeable batteries. Very little interest and effort was put in its photoelectric
applications such as light emission diodes which is primarily due to the poor quality of NiO made by
the previously mentioned methods[4]. Here we are to utilize heterostructures made by p-type NiO
nanowire arrays and n-type II-VI compounds to make high efficiency and low cost LEDs. By using this
material system we hope we can shed some light on developing a simple and cost-effective method to
make blue color LEDs. |
| Status |
New |
| Funding Source |
Federal |
| IAB Research Area |
NanoTechnology: Materials, Processes & Devices |
| Researcher(s) |
Xiaobo Zhang, Kuniharu Takei |
| Advisor(s) |
Ali Javey |
|
|
