| Project ID |
BPN588 |
| Website |
|
| Start Date |
Wed 2010-Aug-11 08:32:25 |
| Last Updated |
Mon 2010-Aug-30 10:37:47 |
| Abstract |
In the past years, integration of III-V materials on Si have been thoroughly investigated,
in order to combine the well establish, low cost, processing of the Si technology with the high
mobility of III-V semiconductors for high performance electron devices. In this work, direct bonding
of InAs nanoribbons on Si/SiO2 (XOI) is proposed as a method for obtaining high performance nanoscale
transistors with clean and purely inorganic interfaces between InAs and SiO2. |
| Status |
New |
| Funding Source |
Other |
| IAB Research Area |
NanoTechnology: Materials, Processes & Devices |
| Researcher(s) |
Morten Madsen, Kuniharu Takei, Hui Fang |
| Advisor(s) |
Ali Javey |
|
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