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BPN588: Direct Bonding of Ultra-Thin InAs on SiO2 for High Performance Transistors

Project ID BPN588
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Start Date Wed 2010-Aug-11 08:32:25
Last Updated Mon 2010-Aug-30 10:37:47
Abstract In the past years, integration of III-V materials on Si have been thoroughly investigated, in order to combine the well establish, low cost, processing of the Si technology with the high mobility of III-V semiconductors for high performance electron devices. In this work, direct bonding of InAs nanoribbons on Si/SiO2 (XOI) is proposed as a method for obtaining high performance nanoscale transistors with clean and purely inorganic interfaces between InAs and SiO2.
Status New
Funding Source
IAB Research Area NanoTechnology: Materials, Processes & Devices
Researcher(s) Morten Madsen, Kuniharu Takei, Hui Fang
Advisor(s) Ali Javey
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