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BPN601: Strain Engineering of Epitaxially Transferred, Ultrathin Layers of III-V Semiconductor on Insulator

Project ID BPN601
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Start Date Tue 2011-Feb-01 12:41:21
Last Updated Tue 2011-Feb-01 22:47:40
Abstract Strain state of ultrathin InAs-on-insulator layers obtained from an epitaxial transfer process is studied. The as-grown InAs epilayer (10ĘC20 nm thick) on the GaSb/AlGaSb source wafer has the expected ~0.62% tensile strain. The strain is found to fully release during the epitaxial transfer of the InAs layer onto a Si/SiO2 substrate. In order to engineer the strain of the transferred InAs layers, a ZrOx cap was used during the transfer process to effectively preserve the strain. The work presents an important advance toward the control of materials properties of III-V on insulator layers.
Status New
Funding Source Federal
IAB Research Area NanoTechnology: Materials, Processes & Devices
Researcher(s) Hui Fang, Morten Madsen, Kuniharu Takei, Ha Sul Kim
Advisor(s) Ali Javey
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