| Project ID |
BPN601 |
| Website |
|
| Start Date |
Tue 2011-Feb-01 12:41:21 |
| Last Updated |
Tue 2011-Feb-01 22:47:40 |
| Abstract |
Strain state of ultrathin InAs-on-insulator layers obtained from an epitaxial transfer
process is studied. The as-grown InAs epilayer (10¨C20 nm thick) on the GaSb/AlGaSb source wafer has
the expected ~0.62% tensile strain. The strain is found to fully release during the epitaxial transfer
of the InAs layer onto a Si/SiO2 substrate. In order to engineer the strain of the transferred InAs
layers, a ZrOx cap was used during the transfer process to effectively preserve the strain. The work
presents an important advance toward the control of materials properties of III-V on insulator layers. |
| Status |
New |
| Funding Source |
Federal |
| IAB Research Area |
NanoTechnology: Materials, Processes & Devices |
| Researcher(s) |
Hui Fang, Morten Madsen, Kuniharu Takei, Ha Sul Kim |
| Advisor(s) |
Ali Javey |
|
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