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BPN614: HEaTS: 4H-SiC FET Technology for Harsh Environment Sensing Application
| Project ID |
BPN614 |
| Website |
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| Start Date |
Wed 2011-Feb-02 01:33:06 |
| Last Updated |
Wed 2013-Jan-23 23:36:20 |
| Abstract |
The goal of this research is developing a wireless, multichip sensing module for addressing the inefficiencies in energy use. By doing so, power systems can be advanced by integration of electronics (communication, signal processing, microactuator control, etc.) to be operated at high temperature. Silicon carbide (SiC) has become the candidate for harsh environment sensing technology because its wide bandgap (3.2 eV), excellent chemical stability, high breakdown electric field strength (3-5 MV/cm), and high saturated electron drift velocity (2E7 cm/s). The goal of my research project is to develop matched differential pair amplifiers using either 4H-SiC junction field effect transistors (JFETs) or 4H-SiC metal-oxide-semiconductor field effect transistors (MOSFETs)and integrated with MEMS-based silicon carbide (SiC) TAPS (Temperature, Acceleration, Pressure and Strain) sensors for extreme harsh environment applications. |
| Status |
Continuing |
| Funding Source |
Industry |
| IAB Research Area |
Physical Sensors & Devices |
| Researcher(s) |
Wei-Cheng Lien |
| Advisor(s) |
Albert P. Pisano |
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