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BPN638: HEaTS: SiC Devices and ICs for Harsh Environment Sensing
| Project ID |
BPN638 |
| Website |
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| Start Date |
Tue 2011-Aug-16 23:00:23 |
| Last Updated |
Wed 2013-Jan-30 13:55:14 |
| Abstract |
The main objective of this research is to design and develop low power Silicon Carbide (SiC) based transistors and Integrated Circuits (ICs) that can withstand the elevated temperature, up to 600°C. The fabricated ICs will be integrated with the SiC-based sensors to develop high temperature sensing systems for various harsh environment applications. |
| Status |
Continuing |
| Funding Source |
Federal |
| IAB Research Area |
Physical Sensors & Devices |
| Researcher(s) |
Ayden Maralani |
| Advisor(s) |
Albert P. Pisano |
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