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BPN638: HEaTS: SiC Devices and ICs for Harsh Environment Sensing

Project ID BPN638
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Start Date Tue 2011-Aug-16 23:00:23
Last Updated Wed 2013-Jul-31 14:22:03
Abstract The main objective of this research is to design and develop low power Silicon Carbide (SiC) based transistors and Integrated Circuits (ICs) that can withstand the elevated temperature, up to 600C. The fabricated ICs will be integrated with the SiC-based sensors to develop high temperature sensing systems for various harsh environment applications.
Status Continuing
Funding Source Federal
IAB Research Area Physical Sensors & Devices
Researcher(s) Ayden Maralani
Advisor(s) Albert P. Pisano
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