| Project ID |
BPN647 |
| Website |
|
| Start Date |
Thu 2011-Aug-18 09:59:50 |
| Last Updated |
Thu 2011-Aug-18 12:24:42 |
| Abstract |
We demonstrate ultrathin body (UTB) high mobility InAsSb-on-insulator (XOI) n-FETs. The devices are
obtained by the epitaxial layer transfer (ELT) of ultrathin InAsSb layers (thickness, 7-17 nm) onto
Si/SiO2 substrates. InAsSb XOI FETs exhibit a peak effective mobility of ~5000 cm2/V-s and an ION/IOFF
ratio of over 104. The top-gated devices exhibit an impressive ION of ~0.24 mA/micron (LG~500 nm) at
VDD=0.5 V and a SS of ~109 mV/dec. These results demonstrate the utility of the XOI platform for
obtaining high mobility n-FETs on Si by using mixed anion arsenide-antimonide as the active channel
material. |
| Status |
New |
| Funding Source |
Federal |
| IAB Research Area |
NanoTechnology: Materials, Processes & Devices |
| Researcher(s) |
Hui Fang, Steven Chuang, Kuniharu Takei |
| Advisor(s) |
Ali Javey |
|
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