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BPN647: Ultra-Thin Body, Mixed Anion Arsenide-Antimonide XOI FETs

Project ID BPN647
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Start Date Thu 2011-Aug-18 09:59:50
Last Updated Thu 2011-Aug-18 12:24:42
Abstract We demonstrate ultrathin body (UTB) high mobility InAsSb-on-insulator (XOI) n-FETs. The devices are obtained by the epitaxial layer transfer (ELT) of ultrathin InAsSb layers (thickness, 7-17 nm) onto Si/SiO2 substrates. InAsSb XOI FETs exhibit a peak effective mobility of ~5000 cm2/V-s and an ION/IOFF ratio of over 104. The top-gated devices exhibit an impressive ION of ~0.24 mA/micron (LG~500 nm) at VDD=0.5 V and a SS of ~109 mV/dec. These results demonstrate the utility of the XOI platform for obtaining high mobility n-FETs on Si by using mixed anion arsenide-antimonide as the active channel material.
Status New
Funding Source Federal
IAB Research Area NanoTechnology: Materials, Processes & Devices
Researcher(s) Hui Fang, Steven Chuang, Kuniharu Takei
Advisor(s) Ali Javey
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