| Project ID |
BPN659 |
| Website |
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| Start Date |
Mon 2012-Jan-30 12:18:49 |
| Last Updated |
Fri 2013-Jan-25 11:54:25 |
| Abstract |
In this Project, we report the use of high-purity semiconducting carbon nanotube networks
and 2-dimensional III-V nanomembranes for high-performance integrated circuits on mechanically
flexible substrates for digital, analog, and radio-frequency applications. We have demonstrated
high-performance carbon nanotube thin-film transistors (TFTs) with on-current, transconductance, and
field-effect mobility up to 15 uA/um, 4 uS/um, and 50 cm2/Vs. Using such devices, digital logic
gates with superior bending stability have been demonstrated. We have also employed a self-aligned
device architecture to fabricate RF transistors with channel lengths down to 75 nm using InAs
nanomembranes on flexible substrates. Measurements reveal that such devices provide an impressive
cutoff frequency of 105 GHz, representing the best performance achieved for transistors fabricated
directly on mechanically flexible substrates. The results demonstrate that our platform can serve as
a foundation for scalable, low-cost, high-performance flexible electronics, enabling multiple types
of nanomaterials to be heterogeneously integrated on flexible substrates for advanced system-level
integrated circuits. |
| Status |
Continuing |
| Funding Source |
Federal |
| IAB Research Area |
NanoTechnology: Materials, Processes & Devices |
| Researcher(s) |
Chuan Wang, Kuniharu Takei, Toshitake Takahashi |
| Advisor(s) |
Ali Javey |
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