BERKELEY SENSOR & ACTUATOR CENTER
UC BERKELEY UC DAVIS
User: Guest |  Site Map |  My BSAC Profile
HOME  PROJECTS  THRUSTS  PUBLICATIONS  ABOUT BSAC  DIRECTORY  ALUMNI  FOR BSAC RESEARCHERS  EVENTS CALENDAR  SECURE LOGIN
Javey
     
 Lee
 Lin
 Wu
 

BPN694: Monolayer Semiconductor Devices

Project ID BPN694
Website
Start Date Wed 2012-Aug-15 11:42:48
Last Updated Wed 2014-Aug-20 14:56:12
Abstract Monolayer chalcogenides have recently been shown promising for future scaled electronics. We've reported high performance field-effect transistors based on single layered (thickness, ~0.7 nm) WSe2 as the active channel with chemically doped source/drain contacts and high-κ gate dielectrics. The top-gated monolayer transistors exhibit a high effective hole (electron) mobility of ~250 (110) cm^2/Vs, perfect subthreshold swing of ~60 mV/dec, and ION/IOFF of >10^6 at room temperature. Special attention is given to lowering the contact resistance for electron or hole injection by degenerate surface dopings. The results here present a promising material system and device architecture for monolayer transistors with excellent characteristics.
Status Continuing
Funding Source Federal
IAB Research Area NanoTechnology: Materials, Processes & Devices
Researcher(s) Mahmut Tosun, Daisuke Kiriya
Advisor(s) Ali Javey
Detailed Information
Secure Access

Private Abstract
Research Report
Poster
Summary Slide
Can’t view video click here
Active Feedback (or Request for Response)

 

  • Copyright Notification: All papers downloaded from this site are © University of California or the publisher, all rights reserved. Contact the BSAC Webmaster for permission related to copyrighted materials.
  • Links on these pages to commercial sites do not represent endorsements by UC or its affiliates.
  • Privacy Policy
  • Contact Us

   webmaster@bsac.eecs.berkeley.edu
  User logged in as: Guest
  User Idle since: August 27, 2014, 4:04 pm