BERKELEY SENSOR & ACTUATOR CENTER
UC BERKELEY UC DAVIS
User: Guest |  Site Map |  My BSAC Profile
HOME  PROJECTS  THRUSTS  PUBLICATIONS  ABOUT BSAC  DIRECTORY  ALUMNI  FOR BSAC RESEARCHERS  EVENTS CALENDAR  SECURE LOGIN
Table of all Projects
     
 

BPN694: Monolayer Semiconductor Devices

Project ID BPN694
Website
Start Date Wed 2012-Aug-15 11:42:48
Last Updated Wed 2014-Aug-20 14:56:12
Abstract Monolayer chalcogenides have recently been shown promising for future scaled electronics. We've reported high performance field-effect transistors based on single layered (thickness, ~0.7 nm) WSe2 as the active channel with chemically doped source/drain contacts and high-κ gate dielectrics. The top-gated monolayer transistors exhibit a high effective hole (electron) mobility of ~250 (110) cm^2/Vs, perfect subthreshold swing of ~60 mV/dec, and ION/IOFF of >10^6 at room temperature. Special attention is given to lowering the contact resistance for electron or hole injection by degenerate surface dopings. The results here present a promising material system and device architecture for monolayer transistors with excellent characteristics.
Status Continuing
Funding Source Federal
IAB Research Area NanoTechnology: Materials, Processes & Devices
Researcher(s) Mahmut Tosun, Daisuke Kiriya
Advisor(s) Ali Javey
Detailed Information
Secure Access

Private Abstract
Research Report
Poster
Summary Slide PDF | VIDEO
Active Feedback (or Request for Response)

 

  • Copyright Notification: All papers downloaded from this site are © University of California or the publisher, all rights reserved. Contact the BSAC Webmaster for permission related to copyrighted materials.
  • Links on these pages to commercial sites do not represent endorsements by UC or its affiliates.
  • Privacy Policy
  • Contact Us

   webmaster@bsac.eecs.berkeley.edu
  User logged in as: Guest
  User Idle since: November 22, 2014, 11:26 pm