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BPN694: Monolayer Semiconductor Devices
| Project ID |
BPN694 |
| Website |
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| Start Date |
Wed 2012-Aug-15 11:42:48 |
| Last Updated |
Tue 2013-Jan-29 17:56:22 |
| Abstract |
Monolayer chalcogenides have recently been shown promising for future scaled electronics.
We've reported high performance p-type field-effect transistors based on single layered (thickness,
~0.7 nm) WSe2 as the active channel with chemically doped source/drain contacts and high-κ gate
dielectrics. The top-gated monolayer transistors exhibit a high effective hole mobility of ~250
cm^2/Vs, perfect subthreshold swing of ~60 mV/dec, and ION/IOFF of >10^6 at room temperature. Special
attention is given to lowering the contact resistance for electron or hole injection by degenerate
surface dopings. The results here present a promising material system and device architecture for
monolayer transistors with excellent characteristics. Different monolayer semiconductor heterostructures will also be explored. |
| Status |
Continuing |
| Funding Source |
Federal |
| IAB Research Area |
NanoTechnology: Materials, Processes & Devices |
| Researcher(s) |
Hui Fang, Mahmut Tosun, Steven Chuang, Kuniharu Takei |
| Advisor(s) |
Ali Javey |
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