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BPN770: Chemical Sensitive Field Effect Transistor (CS-FET)

Project ID BPN770
Website
Start Date Wed 2014-Aug-13 10:13:48
Last Updated Thu 2014-Oct-30 14:14:35
Abstract Silicon IC-based fabrication processing will be used to develop novel compact gas sensors that, unlike current sensors, will operate at room temperature, consume minimal power, exhibit superior sensitivity, provide chemical selectivity and multi-gas detection capabilities, and offer the prospect of very low-cost replication for broad-area deployment. We name this device structure “Chemical Sensitive FET” or “CS-FET.” The operation of the CS-FET involves transistor parametric differentiation under influence of differentiated gas exposures.
Status New
Funding Source NSF
IAB Research Area Physical Sensors & Devices
Researcher(s) Hossain M. Fahad, Hiroshi Shiraki
Advisor(s) Ali Javey
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