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BPN891: Dopant-Free Asymmetric Heterocontact Silicon Solar Cells with >20% Efficiency

Project ID BPN891
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Start Date Sat 2018-Jan-27 11:42:30
Last Updated Mon 2018-Jan-29 18:40:28
Abstract A salient characteristic of solar cells is their ability to subject photo-generated electrons and holes to pathways of asymmetrical conductivity—‘assisting’ them towards their respective contacts. All commercially available crystalline silicon (c-Si) solar cells achieve this by making use of doping in either near-surface regions or overlying silicon-based films. Despite being commonplace, this approach is hindered by several optoelectronic losses and technological limitations specific to doped silicon. A progressive approach to circumvent these issues involves the replacement of doped-silicon contacts with alternative materials which can also form ‘carrier- selective’ interfaces on c-Si. Here we successfully develop and implement dopant-free electron and hole carrier- selective heterocontacts using alkali metal fluorides and metal oxides in combination with passivating intrinsic amorphous silicon interlayers, resulting in power conversion efficiencies of 20.7%.
Status New
Funding Source Federal
IAB Research Area Physical Sensors & Devices
Researcher(s) James Bullock, Mark Hettick, Wenbo Ji
Advisor(s) Ali Javey
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