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BPN895: Infrared Photodetectors Based on 2D Materials

Project ID BPN895
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Start Date Sun 2018-Jan-28 21:31:36
Last Updated Mon 2018-Jan-29 09:54:45
Abstract Infrared (IR) photodetectors are currently subject to a rapidly expanding application space, with an increasing demand for compact, sensitive, and inexpensive detectors. Despite continued advancement, technological factors still limit the widespread usage of IR detectors; specifically, the need for cooling and high costs associated with the processing of III-V and II-VI semiconductors. Here, we explore photoconductors and heterojunction photodiodes utilizing black- phosphorous (bP) and black phosphorous arsenic alloys as mid-wave infrared (MWIR) detectors. While previous studies have demonstrated photodiodes using bP, here we significantly improve the performance, showing for the first time that such devices can be competitive with conventional MWIR photodetectors. Specifically, we demonstrate specific detectives as high as 6*10^10 cm Hz^{1/2} W^{-1} and by leveraging the anisotropic optical properties of bP we demonstrate the first monolithic polarization resolved photodetector which operates without the need for external optics.
Status New
Funding Source DARPA
IAB Research Area NanoTechnology: Materials, Processes & Devices
Researcher(s) Matin Amani, James Bullock
Advisor(s) Ali Javey
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