BERKELEY SENSOR & ACTUATOR CENTER
UC BERKELEY UC DAVIS
User: Guest |  Site Map |  My BSAC Profile
HOME  PROJECTS  THRUSTS  PUBLICATIONS  ABOUT BSAC  DIRECTORY  ALUMNI  FOR BSAC RESEARCHERS  EVENTS CALENDAR  SECURE LOGIN
Former Faculty
     
 Lee
 Lin
 Wu
 Howe
 Tien
 

RTH/TJK2: As-Grown SiGe Thin Film with Low Stress and Low Strain Gradient

Project ID RTH/TJK2
Website
Start Date Mon 2003-Feb-10 14:30:49
Last Updated Thu 2003-Jul-31 15:45:18
Abstract Monolithic integration of MEMS devices with driving and controlling electronics is advantageous for improving performance and lowering cost. Polycrystalline silicon-germanium (poly-SiGe), which has mechanical and electrical properties similar to poly-Si, is a promising candidate for the structural-layer material of post-CMOS integration of MEMS because poly-SiGe can be deposited at much lower temperatures than poly-Si. While low-resistivity poly-SiGe can be easily obtained utilizing in-situ p-type (i.e. boron) doping during deposition, poly-SiGe films deposited at temperatures lower than 450C generally exhibit some level of residual stress and strain gradient. The goal of this research is to reduce the stress and strain gradient in low-temperature deposited films without using any high temperature annealing.
Status Continuing
Funding Source Federal
IAB Research Area Wireless, RF & Smart Dust
Researcher(s) Blake C.-Y. Lin
Advisor(s) Tsu-Jae King, Roger T. Howe
Detailed Information
Secure Access

Private Abstract
Research Report
Summary Slide
Active Feedback (or Request for Response)

 

  • Copyright Notification: All papers downloaded from this site are © University of California or the publisher, all rights reserved. Contact the BSAC Webmaster for permission related to copyrighted materials.
  • Links on these pages to commercial sites do not represent endorsements by UC or its affiliates.
  • Privacy Policy
  • Contact Us

   webmaster@bsac.eecs.berkeley.edu
  User logged in as: Guest
  User Idle since: August 23, 2014, 12:32 am