| Project ID |
RTH/TJK2 |
| Website |
|
| Start Date |
Mon 2003-Feb-10 14:30:49 |
| Last Updated |
Thu 2003-Jul-31 15:45:18 |
| Abstract |
Monolithic integration of MEMS devices with driving and controlling electronics is advantageous for improving performance and lowering cost. Polycrystalline silicon-germanium (poly-SiGe), which has mechanical and electrical properties similar to poly-Si, is a promising candidate for the structural-layer material of post-CMOS integration of MEMS because poly-SiGe can be deposited at much lower temperatures than poly-Si. While low-resistivity poly-SiGe can be easily obtained utilizing in-situ p-type (i.e. boron) doping during deposition, poly-SiGe films deposited at temperatures lower than 450°C generally exhibit some level of residual stress and strain gradient. The goal of this research is to reduce the stress and strain gradient in low-temperature deposited films without using any high temperature annealing. |
| Status |
Continuing |
| Funding Source |
Federal |
| IAB Research Area |
Wireless, RF & Smart Dust |
| Researcher(s) |
Blake C.-Y. Lin |
| Advisor(s) |
Tsu-Jae King, Roger T. Howe |
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