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RTH40: Effects of Boron Concentration on Si1-xGex Properties for Integrated MEMS Technology

Project ID RTH40
Website
Start Date Mon 2003-Feb-10 09:26:14
Last Updated Thu 2005-Sep-01 17:27:55
Abstract Because of its low thermal budget that allows to fabricate MEMS micromachined structures directly on top of electronics, SiGe MEMS technology remains very attracting for the monolithic integration of MEMS with CMOS [1]-[3]. In this scheme, p+Ge would replace Silicon dioxide as the sacrificial layer while p+ SiGe would replace poly Silicon as the structural layer.
Status Completed
Funding Source Federal
IAB Research Area Package, Process & Microassembly
Researcher(s) Marie-Ange Eyoum
Advisor(s) Tsu-Jae King, Roger T. Howe
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