| Project ID |
RTH40 |
| Website |
|
| Start Date |
Mon 2003-Feb-10 09:26:14 |
| Last Updated |
Thu 2005-Sep-01 17:27:55 |
| Abstract |
Because of its low thermal budget that allows to fabricate MEMS micromachined structures directly on top of electronics, SiGe MEMS technology remains very attracting for the monolithic integration of MEMS with CMOS [1]-[3]. In this scheme, p+Ge would replace Silicon dioxide as the sacrificial layer while p+ SiGe would replace poly Silicon as the structural layer. |
| Status |
Completed |
| Funding Source |
Federal |
| IAB Research Area |
Package, Process & Microassembly |
| Researcher(s) |
Marie-Ange Eyoum |
| Advisor(s) |
Tsu-Jae King, Roger T. Howe |
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