| Project ID |
BPN663 |
| Website |
|
| Start Date |
Tue 2012-Jan-31 11:33:47 |
| Last Updated |
Tue 2013-Jan-29 21:17:00 |
| Abstract |
The goal of this project is to develop harsh environment rectification and sensing circuits.
The devices and circuits are designed in silicon carbide (SiC) wafer due to its extraordinary
performance in harsh environment such as high temperature, corrosive chemical. SiC diodes and
rectifier bridges will be designed, fabricated and tested in my research project to develop harsh
environment sensing system. |
| Status |
Continuing |
| Funding Source |
Industry |
| IAB Research Area |
Physical Sensors & Devices |
| Researcher(s) |
Shiqian Shao |
| Advisor(s) |
Albert P. Pisano |
|
|
