BERKELEY SENSOR & ACTUATOR CENTER
UC BERKELEY UC DAVIS
User: Guest |  Site Map |  My BSAC Profile
HOME  PROJECTS  THRUSTS  PUBLICATIONS  ABOUT BSAC  DIRECTORY  ALUMNI  FOR BSAC RESEARCHERS  EVENTS CALENDAR  SECURE LOGIN
Table of all Projects
     
 

BPN686: Spatially Controlled Growth of III-V Semiconductors Toward Low-Cost and High-Efficiency PVs

Project ID BPN686
Website
Start Date Tue 2012-Aug-14 19:36:30
Last Updated Thu 2013-Aug-15 21:31:54
Abstract So far, extensive research has been carried out for III-V semiconductor materials from crystal growth to device fabrications. The reason for this is that III-V shows the highest energy conversion efficiency due to high absorption coefficient and optimal and direct band gap. However, there is problem for III-V applications, which is the high cost of raw materials. We are exploring a method which addresses this limitation. High optical quality crystals have been grown on selected tiny areas to make array of crystals such as on metal foils. This should be useful as a PV without any loss by shut pass or surface recombinations. This method would be useful for making high-quality and cost-effective method for III-V PVs.
Status Continuing
Funding Source Fellowship
IAB Research Area NanoTechnology: Materials, Processes & Devices
Researcher(s) Daisuke Kiriya, Maxwell Zheng, Rehan Kapadia, Zhibin Yu
Advisor(s) Ali Javey
Detailed Information
Secure Access

Private Abstract
Research Report
Summary Slide PDF | VIDEO
Active Feedback (or Request for Response)

 

  • Copyright Notification: All papers downloaded from this site are © University of California or the publisher, all rights reserved. Contact the BSAC Webmaster for permission related to copyrighted materials.
  • Links on these pages to commercial sites do not represent endorsements by UC or its affiliates.
  • Privacy Policy
  • Contact Us

   webmaster@bsac.eecs.berkeley.edu
  User logged in as: Guest
  User Idle since: November 21, 2014, 5:51 pm