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BPN881: Strain-Engineered Growth of Two-Dimensional Materials

Project ID BPN881
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Start Date Wed 2017-Aug-16 13:42:05
Last Updated Wed 2017-Aug-16 15:27:33
Abstract The application of strain to semiconductors allows for controlled modification of their band-structure. This principle is employed for the manufacturing of devices ranging from high-performance transistors to solid- state lasers. Traditionally, strain is typically achieved via growth on lattice-mismatched substrates. For two- dimensional (2D) semiconductors, this is not feasible as they typically do not interact epitaxially with the substrate. Here, we demonstrate controlled strain engineering of 2D semiconductors during synthesis by utilizing the thermal coefficient of expansion (TCE) mismatch between the substrate and semiconductor. Using WSe2 as a model system, we demonstrate stable built-in strains ranging from 1% tensile to 0.2% compressive on substrates with different TCE. Consequently, we observe dramatic modulation of the band-structure, manifested by a strain-driven indirect-to-direct bandgap transition and brightening of the dark exciton in bilayer and monolayer WSe2, respectively. The growth method developed here should enable flexibility in design of more sophisticated devices based on 2D materials.
Status New
Funding Source Federal
IAB Research Area NanoTechnology: Materials, Processes & Devices
Researcher(s) Geun Ho Ahn, Matin Amani
Advisor(s) Ali Javey
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