| Project ID |
BPN891 |
| Website |
|
| Start Date |
Sat 2018-Jan-27 11:42:30 |
| Last Updated |
Mon 2018-Jan-29 18:40:28 |
| Abstract |
A salient characteristic of solar cells is their ability to subject photo-generated electrons and holes to pathways of asymmetrical conductivity—‘assisting’ them towards their respective contacts. All commercially available crystalline silicon (c-Si) solar cells achieve this by making use of doping in either near-surface regions or overlying silicon-based films. Despite being commonplace, this approach is hindered by several optoelectronic losses and technological limitations specific to doped silicon. A progressive approach to circumvent these issues involves the replacement of doped-silicon contacts with alternative materials which can also form ‘carrier- selective’ interfaces on c-Si. Here we successfully develop and implement dopant-free electron and hole carrier- selective heterocontacts using alkali metal fluorides and metal oxides in combination with passivating intrinsic amorphous silicon interlayers, resulting in power conversion efficiencies of 20.7%. |
| Status |
New |
| Funding Source |
Federal |
| IAB Research Area |
Physical Sensors & Devices |
| Researcher(s) |
James Bullock, Mark Hettick, Wenbo Ji |
| Advisor(s) |
Ali Javey |
|
|
