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BPN694: Monolayer Semiconductor Devices

Project ID BPN694
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Start Date Wed 2012-Aug-15 11:42:48
Last Updated Wed 2015-Aug-26 19:41:23
Abstract In this work, we report lateral heterojunction formation in as-exfoliated MoS2 flakes by thickness modulation. Kelvin probe force microscopy is used to map the surface potential at the monolayer-multilayer heterojunction, and consequently the conduction band offset is extracted. Scanning photocurrent microscopy is performed to investigate the spatial photocurrent response along the length of the device including the source and the drain contacts as well as the monolayer-multilayer junction. The peak photocurrent is measured at the monolayer-multilayer interface, which is attributed to the formation of a type-I heterojunction. The work presents experimental and theoretical understanding of the band alignment and photoresponse of thickness modulated MoS2 junctions with important implications for exploring novel optoelectronic devices.
Status Continuing
Funding Source Federal
IAB Research Area NanoTechnology: Materials, Processes & Devices
Researcher(s) Mahmut Tosun, Tania Roy, Daisuke Kiriya, Matin Amani
Advisor(s) Ali Javey
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