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BPN862: 2D Semiconductor Transistors with 1-Nanometer Gate Length

Project ID BPN862
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Start Date Tue 2017-Jan-31 13:44:40
Last Updated Mon 2018-Jan-29 19:09:41
Abstract MoS2 transistors with a 1-nm physical gate length using a single-walled carbon nanotube as the gate electrode are demonstrated. These devices exhibit near ideal subthreshold swing ~65 millivolts per decade and an On/Off current ratio ~10^6. This work provides new insight into the ultimate scaling of gate lengths for a FET by surpassing the 5 nm limit often associated with Si technology. Furthermore, the impact of using gate electrodes with limited density of states on the characteristics of nanoscale transistors is studied. Current work involves self- aligned doping of the extension regions in the device to improve On currents.
Status Continuing
Funding Source Federal
IAB Research Area NanoTechnology: Materials, Processes & Devices
Researcher(s) Sujay B. Desai, Chunsong Zhao
Advisor(s) Ali Javey
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